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APT25GP90B PDF预览

APT25GP90B

更新时间: 2024-09-25 04:32:47
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 180K
描述
POWER MOS 7 IGBT

APT25GP90B 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.7Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):72 A集电极-发射极最大电压:900 V
配置:SINGLEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):190 ns
标称接通时间 (ton):29 nsBase Number Matches:1

APT25GP90B 数据手册

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APT25GP90B
900V  
®
POWER MOS 7 IGBT  
TO-247  
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.  
Using Punch Through Technology this IGBT is ideal for many high frequency,  
high voltage switching applications and has been optimized for high frequency  
switchmode power supplies.  
G
C
C
E
E
• Low Conduction Loss  
• Low Gate Charge  
• 100 kHz operation @ 600V, 21A  
• 50 kHz operation @ 600V, 33A  
• SSOA Rated  
G
• Ultrafast Tail Current shutoff  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
UNIT  
Symbol  
VCES  
VGE  
APT25GP90B  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
900  
±20  
±30  
Volts  
VGEM  
IC1  
Gate-Emitter Voltage Transient  
72  
36  
Continuous Collector Current @ TC = 25°C  
Amps  
IC2  
Continuous Collector Current @ TC = 110°C  
1
ICM  
110  
Pulsed Collector Current  
@ TC = 150°C  
SSOA  
PD  
Switching Safe Operating Area @ TJ = 150°C  
110A @ 900V  
417  
Watts  
°C  
Total Power Dissipation  
TJ,TSTG  
TL  
-55 to 150  
300  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
900  
3
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)  
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)  
4.5  
3.2  
2.7  
6
Volts  
3.9  
VCE(ON)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
250  
1000  
±100  
ICES  
µA  
nA  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
IGES  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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