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APT20F50B PDF预览

APT20F50B

更新时间: 2024-11-27 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 321K
描述
N-Channel FREDFET

APT20F50B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.84
其他特性:AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):405 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT20F50B 数据手册

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APT20F50B  
APT20F50S  
500V,ꢀꢀꢀ20A,ꢀꢀꢀ0.30ꢀꢀMax,Trrꢀ200nS  
N-Channel FREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
D3PAK  
This 'FREDFET' version has a drain-source (body) diode that has been optimized for  
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft  
rr  
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly  
reduced ratio of C /C result in excellent noise immunity and low switching loss. The  
rss iss  
APT20F50B  
APT20F50S  
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control  
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching  
at very high frequency.  
D
S
Single die FREDFET  
G
FEATURES  
TYPICAL APPLICATIONS  
•ꢀ ZVSꢀphaseꢀshiftedꢀandꢀotherꢀfullꢀbridge  
•ꢀꢀFastꢀswitchingꢀwithꢀlowꢀEMI  
•ꢀꢀHalfꢀbridge  
ꢀ •ꢀꢀLowꢀt ꢀforꢀhighꢀreliability  
rr  
•ꢀꢀPFCꢀandꢀotherꢀboostꢀconverter  
•ꢀ Buckꢀconverter  
ꢀ •ꢀꢀUltraꢀlowꢀC ꢀforꢀimprovedꢀnoiseꢀimmunity  
rss  
ꢀ •ꢀꢀLowꢀgateꢀcharge  
ꢀ •ꢀꢀAvalancheꢀenergyꢀrated  
•ꢀꢀRoHSꢀcompliant  
•ꢀꢀSingleꢀandꢀtwoꢀswitchꢀforward  
•ꢀꢀFlyback  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
20  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
13  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
60  
30  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
405  
10  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
290  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
0.43  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
0.15  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
150  
300  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 10 Seconds (1.6mm from case)  
oz  
g
0.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Mounting Torque ( TO-247 Package), 6-32 or M3 screw  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

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