APT20GF120BR
APT20GF120BR
1200V 32A
Fast IGBT
TO-247
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
G
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
C
C
E
E
• Avalanche Rated
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Parameter
UNIT
APT20GF120BR
1200
1200
±20
Collector-Emitter Voltage
VCES
VCGR
VGE
IC1
Volts
Collector-Gate Voltage (RGE = 20KW)
Gate-Emitter Voltage
32
Continuous Collector Current @ TC = 25°C
20
IC2
Continuous Collector Current @ TC = 90°C
Amps
1
64
ICM
Pulsed Collector Current
@ TC = 25°C
40
ILM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
2
22
mJ
EAS
PD
Single Pulse Avalanche Energy
200
Watts
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
-55 to 150
300
TJ,TSTG
TL
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)
BVCES
1200
4.5
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 350µA, Tj = 25°C)
5.5
2.7
3.3
6.5
3.2
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
3.9
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
ICES
0.8
mA
nA
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
5.0
IGES
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE