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APT20GN60BDQ1 PDF预览

APT20GN60BDQ1

更新时间: 2024-09-17 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 156K
描述
High Speed PT IGBT

APT20GN60BDQ1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.03
外壳连接:COLLECTOR最大集电极电流 (IC):40 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:30 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):136 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):290 ns
标称接通时间 (ton):19 nsBase Number Matches:1

APT20GN60BDQ1 数据手册

 浏览型号APT20GN60BDQ1的Datasheet PDF文件第2页浏览型号APT20GN60BDQ1的Datasheet PDF文件第3页浏览型号APT20GN60BDQ1的Datasheet PDF文件第4页浏览型号APT20GN60BDQ1的Datasheet PDF文件第5页浏览型号APT20GN60BDQ1的Datasheet PDF文件第6页浏览型号APT20GN60BDQ1的Datasheet PDF文件第7页 
APT20GN60BDQ1  
APT20GN60SDQ1  
APT20GN60BDQ1(G) APT20GN60SDQ1(G)  
600V  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra  
low VCE(ON) and are ideal for low frequency applications that require absolute minimum  
conduction loss. Easy paralleling is a result of very tight parameter distribution and a  
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive  
design and minimizes losses.  
(B)  
D3PAK  
(S)  
C
E
G
G
C
E
600V Field Stop  
• Trench Gate: Low VCE(on)  
• Easy Paralleling  
C
E
• 6µs Short Circuit Capability  
• 175°C Rated  
G
Applications:Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
UNIT  
APT20GN60BD_SDQ1(G)  
VCES  
Collector-Emitter Voltage  
600  
Volts  
VGE  
IC1  
Gate-Emitter Voltage  
±±0  
40  
Continuous Collector Current @ TC = 25°C  
IC2  
Continuous Collector Current @ TC = 110°C  
24  
Amps  
1
Pulsed Collector Current  
@ TC = 175°C  
ICM  
60  
Switching Safe Operating Area @ TJ = 175°C  
60A @ 600V  
1±6  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
-55 to 175  
±00  
TL  
Max. Lead Temp. for Soldering: 0.06±" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
5.0  
1.1  
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 2mA)  
Gate Threshold Voltage (VCE = VGE, IC = 290µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C)  
5.8  
1.5  
1.7  
6.5  
1.9  
Volts  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
50  
ICES  
µA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
TBD  
±00  
IGES  
Gate-Emitter Leakage Current (VGE = ±20V)  
Intergrated Gate Resistor  
nA  
RG(int)  
Ω
N/A  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  

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