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APT10SCE170B PDF预览

APT10SCE170B

更新时间: 2024-02-05 13:09:48
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 534K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 23A, 1700V V(RRM), Silicon Carbide, TO-247,

APT10SCE170B 技术参数

生命周期:Obsolete包装说明:R-PSFM-T2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.8 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:23 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大功率耗散:214 W
最大重复峰值反向电压:1700 V最大反向电流:200 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

APT10SCE170B 数据手册

 浏览型号APT10SCE170B的Datasheet PDF文件第1页浏览型号APT10SCE170B的Datasheet PDF文件第3页浏览型号APT10SCE170B的Datasheet PDF文件第4页 
APT10SCE170B  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
Junction-to-Case Thermal Resistance  
0.7  
°C/W  
oz  
RθJC  
WT  
0.22  
5.9  
Package Weight  
g
10  
lb·in  
N·m  
Torque  
Maximum Mounting Torque  
1.1  
Microsemiꢀreservesꢀtheꢀrightꢀtoꢀchange,ꢀwithoutꢀnotice,ꢀtheꢀspecificationsꢀandꢀinformationꢀcontainedꢀherein.  
TYPICAL PERFORMANCE CURVES  
0. 8  
0. 7  
D = 0.9  
0. 6  
0.7  
0. 5  
0. 4  
0.5  
Note:  
0. 3  
t
1
0.3  
0. 2  
t
2
t
1
t
Duty Factor D =  
Peak T = P x Z  
/
2
0. 1  
0
0.1  
+ T  
C
J
DM  
θJC  
0.05  
SINGLE PULSE  
10-5  
10-3  
10-4  
10-2  
0.1  
1
10  
RECTANGULAR PULSE DURATION (seconds)  
FIGUREꢀ1.ꢀMAXIMUMꢀEFFECTIVEꢀTRANSIENTꢀTHERMALꢀIMPEDANCE,ꢀJUNCTION-TO-CASEꢀvs.ꢀPULSEꢀDURATION  
25  
20  
15  
10  
T
= -55°C  
J
20  
15  
10  
T
= 25°C  
J
T
T
= 125°C  
= 175°C  
J
J
5
5
0
0
25  
50  
75  
Case Temperature (°C)  
FIGUREꢀ3,ꢀꢀMaximumꢀForwardꢀCurrentꢀvs.ꢀCaseꢀTemperature  
100 125 150  
175  
0
1
2
3
4
V , ANODE-TO-CATHODE VOLTAGE (V)  
F
FIGUREꢀ2,ꢀꢀForwardꢀCurrentꢀvs.ꢀForwardꢀVoltage  

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