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APT1101R2BFLL

更新时间： 2024-01-18 05:23:01

品牌	Logo	应用领域
ADPOW		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
5页	107K
描述
POWER MOS 7 FREDFET

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APT1101R2BFLL 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.72	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	298 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

APT1101R2BFLL 数据手册

APT1101R2BFLL

APT1101R2SFLL

1100V 10A 1.200Ω

POWER MOS 7 FREDFET

D³PAK

TO-247

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT1101R2BFLL_SFLL UNIT

V_DSS

I_D

Drain-Source Voltage

1100

Volts

Continuous Drain Current @ T_C= 25°C

Amps

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

Volts

±40

Watts

W/°C

298

P_D

2.38

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

1100

Drain-Source On-State Resistance

(V_GS= 10V, 5A)

1.20

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= 1100V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 880V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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与APT1101R2BFLL相关器件

型号	品牌	描述	获取价格	数据表
APT1101R2SFLL	MICROSEMI	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
APT1101R2SFLL	ADPOW	POWER MOS 7 FREDFET	获取价格
APT1101RBFLL	ADPOW	POWER MOS 7 FREDFET	获取价格
APT1101RBFLLG	MICROSEMI	Power Field-Effect Transistor, 13A I(D), 1100V, 1ohm, 1-Element, N-Channel, Silicon, Metal	获取价格
APT1101RSFLL	ADPOW	POWER MOS 7 FREDFET	获取价格
APT1101RSFLLG	MICROSEMI	Power Field-Effect Transistor, 13A I(D), 1100V, 1ohm, 1-Element, N-Channel, Silicon, Metal	获取价格

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