是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 雪崩能效等级(Eas): | 2500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1100 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.58 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 568 W | 最大脉冲漏极电流 (IDM): | 80 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT11058JFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT11058LFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT110GF60JN | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 | |
APT110GL100JN | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 110A I(C), 1000V V(BR)CES, N-Channel, ISOTOP-4 | |
APT-114 | ABRACON |
获取价格 |
Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1CT:1.41CT | |
APT-114T | ABRACON |
获取价格 |
Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1CT:1.41CT | |
APT11F80B | MICROSEMI |
获取价格 |
N-Channel FREDFET | |
APT11F80S | MICROSEMI |
获取价格 |
N-Channel FREDFET | |
APT11GF120BRD | ETC |
获取价格 |
Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family | |
APT11GF120BRD1 | ADPOW |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 |