是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.74 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 524 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 46 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Pure Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT11GF120BRD | ETC |
获取价格 |
Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family | |
APT11GF120BRD1 | ADPOW |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 | |
APT11GF120BRD1 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor | |
APT11GF120BRDQ1 | ADPOW |
获取价格 |
FAST IGBT & FRED | |
APT11GF120BRDQ1G | ADPOW |
获取价格 |
FAST IGBT & FRED | |
APT11GF120KR | ADPOW |
获取价格 |
FAST IGBT | |
APT11GF120KRG | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules | |
APT11GP60BDQB | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT11GP60BDQBG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 | |
APT11GP60K | ADPOW |
获取价格 |
POWER MOS 7 IGBT |