是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 1.49 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 470 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.45 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 33 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT11N80BC3G | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Met | |
APT11N80GC3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
APT11N80GC3 | ADPOW |
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Power Field-Effect Transistor, 7.4A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Met | |
APT11N80KC3 | ADPOW |
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Super Junction MOSFET | |
APT11N80KC3G | MICROSEMI |
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Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Met | |
AP-T12 | GRAYHILL |
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Sealed against contamination when properly mounted | |
APT-120 | ABRACON |
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Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1:1 | |
APT1201R2BFLL | ADPOW |
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POWER MOS 7 FREDFET | |
APT1201R2BFLLG | MICROSEMI |
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Power Field-Effect Transistor, 12A I(D), 1200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
APT1201R2BLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |