生命周期: | Obsolete | 包装说明: | , |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.64 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 12 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 400 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1201R2SFLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 1200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
APT1201R2SLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT1201R4BFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT1201R4BFLLG | MICROSEMI |
获取价格 |
POWER MOS 7 FREDFET | |
APT1201R4BLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT1201R4SFLL | ADPOW |
获取价格 |
POWER MOS 7 FREDFET | |
APT1201R4SFLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Meta | |
APT1201R4SLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT1201R5BVFR | ADPOW |
获取价格 |
POWER MOS V | |
APT1201R5BVFRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 1200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |