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APT11044LFLLG PDF预览

APT11044LFLLG

更新时间: 2024-02-16 17:37:46
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 101K
描述
Power Field-Effect Transistor, 26A I(D), 1100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

APT11044LFLLG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.71
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1100 V
最大漏极电流 (ID):26 A最大漏源导通电阻:0.44 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT11044LFLLG 数据手册

 浏览型号APT11044LFLLG的Datasheet PDF文件第2页浏览型号APT11044LFLLG的Datasheet PDF文件第3页浏览型号APT11044LFLLG的Datasheet PDF文件第4页浏览型号APT11044LFLLG的Datasheet PDF文件第5页 
APT11044B2FLL  
APT11044LFLL  
1100V 26A 0.440Ω  
R
POWER MOS 7 FREDFET  
Power MOS 7® is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)  
and Qg. Power MOS 7® combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
T-MAX™  
TO-264  
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• Increased Power Dissipation  
• Easier To Drive  
D
S
G
• Popular T-MAX™ or TO-264 Package  
FAST RECOVERY BODY DIODE  
MAXIMUMRATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT11044JFLL  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
1100  
26  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
104  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
±40  
Watts  
W/°C  
694  
PD  
5.56  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
26  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3000  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
1100  
2
Drain-Source On-State Resistance  
(VGS = 10V, 13A)  
0.440  
250  
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
IDSS  
µA  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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