Datasheet > AP9972GI_08

AP9972GI_08

更新时间： 2024-09-16 12:26:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	103K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9972GI_08 数据手册

AP9972GI

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

60V

18mΩ

35A

▼ Single Drive Requirement

▼ Lower On-resistance

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

TO-220CFM(I)

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for all

commercial-industrial through hole applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+25

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

120

31.3

0.25

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

Data and specifications subject to change without notice

200812312

12 3 4

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