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AP9974AGP-HF PDF预览

AP9974AGP-HF

更新时间: 2024-11-01 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 101K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9974AGP-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.63Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):68 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):272 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9974AGP-HF 数据手册

 浏览型号AP9974AGP-HF的Datasheet PDF文件第2页浏览型号AP9974AGP-HF的Datasheet PDF文件第3页浏览型号AP9974AGP-HF的Datasheet PDF文件第4页 
AP9974AGP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
D
S
BVDSS  
RDS(ON)  
ID  
60V  
12m  
68A  
Single Drive Requirement  
Fast Switching Characteristic  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
applications and suited for low voltage applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
68  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
A
43  
A
272  
104  
2
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
W
W
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.2  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201207023  

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