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AP9972GS-HF_16 PDF预览

AP9972GS-HF_16

更新时间: 2024-11-19 01:21:03
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
5页 61K
描述
Simple Drive Requirement

AP9972GS-HF_16 数据手册

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AP9972GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
60V  
18mΩ  
60A  
D
S
Simple Drive Requirement  
RoHS Compliant & Halogen-Free  
G
Description  
AP9972 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and  
fast switching performance. It provides the designer with an extreme  
efficient device for use in a wide range of power applications.  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications using infrared reflow technique and suited  
for high current application due to the low connection resistance. The  
through-hole version (AP9972GP) are available for low-profile  
applications.  
G
D
S
TO-263(S)  
TO-220(P)  
G
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
60  
+25  
Gate-Source Voltage  
V
Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
60  
A
Drain Current, VGS @ 10V  
Pulsed Drain Current1  
38  
A
230  
A
PD@TC=25℃  
Total Power Dissipation  
89  
W
Linear Derating Factor  
0.7  
W/℃  
mJ  
A
EAS  
IAR  
Single Pulse Avalanche Energy3  
Avalanche Current3  
45  
30  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
1.4  
40  
62  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201501157  

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