5秒后页面跳转
AP9972GS-HF PDF预览

AP9972GS-HF

更新时间: 2024-11-06 21:00:31
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
4页 95K
描述
TRANSISTOR 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power

AP9972GS-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
雪崩能效等级(Eas):45 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):230 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9972GS-HF 数据手册

 浏览型号AP9972GS-HF的Datasheet PDF文件第2页浏览型号AP9972GS-HF的Datasheet PDF文件第3页浏览型号AP9972GS-HF的Datasheet PDF文件第4页 
AP9972GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low Gate Charge  
D
S
BVDSS  
RDS(ON)  
ID  
60V  
18mΩ  
60A  
Single Drive Requirement  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
G
D
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
S
TO-263(S)  
TO-220(P)  
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9972GP) are  
available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
60  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
38  
A
230  
89  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.7  
45  
W/℃  
mJ  
A
EAS  
IAR  
Single Pulse Avalanche Energy3  
Avalanche Current3  
30  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maximum Thermal Resistance, Junction-ambient  
1.4  
40  
62  
Rthj-a  
Rthj-a  
Data and specifications subject to change without notice  
1
201104186  

与AP9972GS-HF相关器件

型号 品牌 获取价格 描述 数据表
AP9972GS-HF_14 A-POWER

获取价格

Single Drive Requirement
AP9972GS-HF_16 A-POWER

获取价格

Simple Drive Requirement
AP9973GD A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9973GH A-POWER

获取价格

TRANSISTOR 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACK
AP9973GH-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9973GH-HF_14 A-POWER

获取价格

Single Drive Requirement
AP9973GI A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9973GJ A-POWER

获取价格

TRANSISTOR 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACK
AP9973GJ-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9973GJ-HF_14 A-POWER

获取价格

Single Drive Requirement