AP9972GR-HF

更新时间： 2024-11-06 13:05:35

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数据手册

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AP9972GR-HF 数据手册

AP9972AGI

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

60V

16mΩ

32A

▼ Single Drive Requirement

▼ Fast Switching Performance

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

TO-220CFM(I)

The TO-220CFM isolation package is widely preferred for all

commercial-industrial through hole applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

20.3

120

31.3

P_D@T_C=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

Data and specifications subject to change without notice

201207192

12 3 4

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