Datasheet > AP9972GS,P-HF

AP9972GS,P-HF

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	104K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9972GS,P-HF 数据手册

AP9972GS/P-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

60V

18mΩ

60A

▼ Single Drive Requirement

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

TO-220(P)

The TO-263 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP9972GP) are

available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+25

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

230

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.7

W/℃

E_AS

I_AR

Single Pulse Avalanche Energy³

Avalanche Current³

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

Maximum Thermal Resistance, Junction-ambient

1.4

Rthj-a

Data and specifications subject to change without notice

201104186

12 3 4

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