AP9585H

更新时间： 2024-10-28 03:19:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	75K
描述
P-CHANNEL ENHANCEMENT MODE

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数据手册

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AP9585H 数据手册

AP9585H/J

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-80V

180mΩ

-11.2A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

Description

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP9585J) is available for low-profile applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

-80

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±25

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

-11.2

-7.1

P_D@T_C=25℃

Total Power Dissipation

44.6

0.36

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

2.8

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

200302041

12 3 4

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