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AP95T06BGP PDF预览

AP95T06BGP

更新时间: 2024-11-20 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲驱动局域网
页数 文件大小 规格书
5页 120K
描述
Simple Drive Requirement, Lower On-resistance

AP95T06BGP 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71Is Samacsys:N
雪崩能效等级(Eas):450 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):260 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP95T06BGP 数据手册

 浏览型号AP95T06BGP的Datasheet PDF文件第2页浏览型号AP95T06BGP的Datasheet PDF文件第3页浏览型号AP95T06BGP的Datasheet PDF文件第4页浏览型号AP95T06BGP的Datasheet PDF文件第5页 
AP95T06BGP  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
9mΩ  
75A  
Lower On-resistance  
Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current, VGS @ 10V3  
±20  
75  
V
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
57  
A
260  
138  
1.11  
450  
30  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy4  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.9  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200804281  

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