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AP95T07GS PDF预览

AP95T07GS

更新时间: 2024-10-28 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
5页 153K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP95T07GS 技术参数

生命周期:Contact Manufacturer零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65Is Samacsys:N
雪崩能效等级(Eas):450 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.005 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP95T07GS 数据手册

 浏览型号AP95T07GS的Datasheet PDF文件第2页浏览型号AP95T07GS的Datasheet PDF文件第3页浏览型号AP95T07GS的Datasheet PDF文件第4页浏览型号AP95T07GS的Datasheet PDF文件第5页 
AP95T07GS  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
75V  
5mΩ  
80A  
Lower On-resistance  
Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
The TO-263 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
75  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current, VGS @ 10V3  
+20  
V
ID@TC=25  
ID@TC=100℃  
IDM  
80  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
70  
A
320  
A
PD@TC=25℃  
Total Power Dissipation  
300  
W
Linear Derating Factor  
2
W/℃  
mJ  
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
450  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)5  
0.5  
40  
Rthj-a  
Data and specifications subject to change without notice  
1
200901122  

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