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AP95T10GW-HF PDF预览

AP95T10GW-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 65K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP95T10GW-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0064 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):600 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP95T10GW-HF 数据手册

 浏览型号AP95T10GW-HF的Datasheet PDF文件第2页浏览型号AP95T10GW-HF的Datasheet PDF文件第3页浏览型号AP95T10GW-HF的Datasheet PDF文件第4页 
AP95T10GW-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
6.4mΩ  
150A  
Lower On-resistance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
The TO-3P package is widely preferred for commercial-industrial  
surface mount applications and suited for higher voltage applications  
such as SMPS.  
TO-3P  
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
Continuous Drain Current, VGS @ 10V(Package Limited)  
ID@TC=25  
ID@TC=100℃  
ID@TC=25℃  
IDM  
150  
A
108  
A
120  
A
Pulsed Drain Current1  
600  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
375  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.4  
40  
Rthj-a  
Data and specifications subject to change without notice  
1
201202152  

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