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AP95T10GI-HF PDF预览

AP95T10GI-HF

更新时间: 2024-11-21 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 99K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP95T10GI-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):60 A最大漏源导通电阻:0.0064 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP95T10GI-HF 数据手册

 浏览型号AP95T10GI-HF的Datasheet PDF文件第2页浏览型号AP95T10GI-HF的Datasheet PDF文件第3页浏览型号AP95T10GI-HF的Datasheet PDF文件第4页 
AP95T10GI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
6.4m  
60A  
Lower On-resistance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS@10V  
Continuous Drain Current, VGS@10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
60  
A
43  
A
240  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
60  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
2.5  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200910271  

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