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AP9620GM PDF预览

AP9620GM

更新时间: 2024-10-28 08:32:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
6页 82K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9620GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):9.5 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):76 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9620GM 数据手册

 浏览型号AP9620GM的Datasheet PDF文件第2页浏览型号AP9620GM的Datasheet PDF文件第3页浏览型号AP9620GM的Datasheet PDF文件第4页浏览型号AP9620GM的Datasheet PDF文件第5页浏览型号AP9620GM的Datasheet PDF文件第6页 
AP9620GM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On Resistance  
BVDSS  
RDS(ON)  
ID  
-20V  
20mΩ  
-9.5A  
D
D
D
Capable of 2.5V Drive  
Fast Switching  
D
G
Simple Drive Requirement  
S
S
SO-8  
S
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is universally preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±8  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-9.5  
A
-7.6  
A
-76  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
20020502  

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