Datasheet > AP95T11GI-HF_14

AP95T11GI-HF_14

更新时间： 2024-11-22 01:21:27

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	100K
描述
Simple Drive Requirement

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数据手册

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AP95T11GI-HF_14 数据手册

AP95T07GS-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

75V

5mΩ

80A

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

The TO-263 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

320

P_D@T_C=25℃

Total Power Dissipation

300

Linear Derating Factor

W/℃

℃

E_AS

T_STG

T_J

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

450

-55 to 175

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵

0.5

Rthj-a

Data and specifications subject to change without notice

201105092

12 3 4

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