是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 450 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.005 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 320 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP95T07GS | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T07GS-HF_14 | A-POWER |
获取价格 |
Simple Drive Requirement | |
AP95T08GP | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10AGI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10AGP-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10AGW-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10GI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10GP-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T10GW-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP95T11GI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |