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AP95T10AGW-HF

更新时间： 2024-10-28 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	56K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP95T10AGW-HF 数据手册

AP95T10AGW-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

6mΩ

150A

▼ Lower On-resistance

▼ RoHS Compliant & Halogen-Free

Description

AP95T10A series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The TO-3P package is widely preferred for commercial-industrial

surface mount applications and suited for higher voltage

applications such as SMPS.

TO-3P

Absolute Maximum Ratings

Symbol

Parameter

Rating

100

+20

150

120

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current (Chip)

Continuous Drain Current, V_GS@ 10V³

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

480

277.8

3.1

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maixmum Thermal Resistance, Junction-ambient

0.45

Rthj-a

Data and specifications subject to change without notice

201209121

12 3 4

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