AP95T08GP

更新时间： 2024-10-28 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	71K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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数据手册

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AP95T08GP 数据手册

AP95T08GP

Preliminary

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

80V

7mΩ

80A

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant

Description

The Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

TO-220(P)

The TO-220 package is universally preferred for all commercial-

industrial power applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

320

P_D@T_C=25℃

Total Power Dissipation

300

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

0.5

Rthj-a

Data and specifications subject to change without notice

200606071pre-1/4

12 3 4

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