AP6679S

更新时间： 2024-09-16 08:32:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	78K
描述
P-CHANNEL ENHANCEMENT MODE

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数据手册

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AP6679S 数据手册

AP6679S/P

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower On-resistance

BV_DSS

R_DS(ON)

I_D

-30V

9mΩ

-75A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

TO-220(P)

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP6679P) are available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±25

-75

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

-50

300

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.71

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

1.4

Rthj-a

Data and specifications subject to change without notice

201231031

12 3 4

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