AP6906GH-HF

更新时间： 2024-11-18 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
4页	101K
描述
Simple Drive Requirement, Fast Switching Performance

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数据手册

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AP6906GH-HF 数据手册

AP6906GH-HF

Preliminary

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

60V

40mΩ

16.4A

▼ Fast Switching Performance

▼ Two Independent Device

▼ Halogen Free & RoHS Compliant Product

D1 (TAB1)

D2 (TAB2)

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

SDPAK^TM

SDPAK^TMused APEC innovated package and provides two

independent device that is suitable and optimum for DC/DC

power application.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

16.4

6.2

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

6.0

Rthj-a

Data and specifications subject to change without notice

20090716pre

12 3 4

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