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AP6683GYT-HF PDF预览

AP6683GYT-HF

更新时间: 2024-11-18 12:51:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 94K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6683GYT-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, S-PDSO-F8Reach Compliance Code:compliant
HTS代码:8541.29.00.95风险等级:5.74
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):14.5 A最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-F8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.13 W最大脉冲漏极电流 (IDM):50 A
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP6683GYT-HF 数据手册

 浏览型号AP6683GYT-HF的Datasheet PDF文件第2页浏览型号AP6683GYT-HF的Datasheet PDF文件第3页浏览型号AP6683GYT-HF的Datasheet PDF文件第4页 
AP6683GYT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-30V  
D
S
Small Size & Lower Profile  
10mΩ  
-14.5A  
RoHS Compliant & Halogen-Free  
G
D
D
Description  
D
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
The PMPAK® 3x3 package is special for DC-DC converters application  
and lower 1.0mm profile with backside heat sink.  
S
S
S
G
PMPAK® 3x3  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
-14.5  
A
-11.6  
A
-50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.13  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
40  
Data and specifications subject to change without notice  
1
201301291  

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