生命周期: | Contact Manufacturer | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.67 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 0.009 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 50 A | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP6680CGYT-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Size & Lower Profile | |
AP6680GM | A-POWER |
获取价格 |
Low On-Resistance, High Vgs Max Rating Voltage | |
AP6680SGYT-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Size & Lower Profile | |
AP6681GMT-HF | A-POWER |
获取价格 |
Low On-resistance, SO-8 Compatible | |
AP6683GYT-HF | A-POWER |
获取价格 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP6714 | DIODES |
获取价格 |
1.8MHz SYNCHRONOUS BOOST CONVERTER | |
AP6714M10G-13 | DIODES |
获取价格 |
1.8MHz SYNCHRONOUS BOOST CONVERTER | |
AP6800GEO | A-POWER |
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Low on-resistance, Optimal DC/DC battery application | |
AP-68681% | VISHAY |
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General Purpose Inductor, 68uH, 1%, 1 Element, Ferrite-Core | |
AP-686810% | VISHAY |
获取价格 |
General Purpose Inductor, 68uH, 10%, 1 Element, Ferrite-Core |