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AP6680BGYT-HF PDF预览

AP6680BGYT-HF

更新时间: 2024-11-06 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管驱动
页数 文件大小 规格书
4页 101K
描述
Simple Drive Requirement, Small Size & Lower Profile

AP6680BGYT-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):50 A表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP6680BGYT-HF 数据手册

 浏览型号AP6680BGYT-HF的Datasheet PDF文件第2页浏览型号AP6680BGYT-HF的Datasheet PDF文件第3页浏览型号AP6680BGYT-HF的Datasheet PDF文件第4页 
AP6680BGYT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9m  
16A  
D
S
Small Size & Lower Profile  
RoHS Compliant & Halogen-Free  
G
D
D
Description  
Advanced Power MOSFETs from APEC provide the  
D
D
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The PMPAK® 3x3 package is special for DC-DC converters  
application and lower 1.0mm profile with backside heat sink.  
S
S
S
G
PMPAK® 3x3  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
16  
A
13  
A
50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3.57  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
5
Rthj-a  
35  
Data and specifications subject to change without notice  
1
201103291  

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