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AP6681GMT-HF PDF预览

AP6681GMT-HF

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 94K
描述
Low On-resistance, SO-8 Compatible

AP6681GMT-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-F8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):135 A
最大漏源导通电阻:0.0046 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):200 A表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP6681GMT-HF 数据手册

 浏览型号AP6681GMT-HF的Datasheet PDF文件第2页浏览型号AP6681GMT-HF的Datasheet PDF文件第3页浏览型号AP6681GMT-HF的Datasheet PDF文件第4页 
AP6681GMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
-30V  
3.1mΩ  
-135A  
D
S
SO-8 Compatible  
Simple Drive Requirement  
RoHS Compliant & Halogen-Free  
G
D
Description  
D
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
D
The PMPAK® 5x6 package is special for DC-DC converters application  
and the foot print is compatible with SO-8 with backside heat sink.  
S
S
S
G
PMPAK® 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
Continuous Drain Current (Chip), VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
-135  
A
-33  
A
-26.4  
-200  
A
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
83.3  
W
W
Total Power Dissipation  
5
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
1.5  
25  
Rthj-a  
Data and specifications subject to change without notice  
1
201211221  

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