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AP6910GSM-HF PDF预览

AP6910GSM-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
7页 90K
描述
Low On-resistance, Fast Switching Characteristic

AP6910GSM-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.74Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.0158 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP6910GSM-HF 数据手册

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AP6910GSM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Low On-resistance  
CH-1 BVDSS  
RDS(ON)  
30V  
15.8mΩ  
9A  
S1/D2  
S1/D2  
S1/D2  
G1  
Fast Switching Characteristic  
Surface Mount Package  
ID  
S2  
G2  
D1  
RoHS Compliant & Halogen-Free  
CH-2 BVDSS  
RDS(ON)  
30V  
SO-8  
D1  
15.8mΩ  
9A  
Description  
ID  
D1  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G1  
N-Channel 1  
MOSFET  
S1/D2  
G2  
N-Channel 2  
MOSFET  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
CH-1  
30  
CH2  
VDS  
VGS  
Drain-Source Voltage  
30  
+20  
9
V
V
Gate-Source Voltage  
+20  
9
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
7.2  
40  
7.2  
40  
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.0  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200912282  

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