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AP6902GH-HF PDF预览

AP6902GH-HF

更新时间: 2024-11-18 20:01:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲晶体管
页数 文件大小 规格书
4页 95K
描述
TRANSISTOR 42 A, 30 V, 0.001 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power

AP6902GH-HF 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PSSO-G4
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.71其他特性:ULTRA LOW RESISTANCE
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):42 A
最大漏源导通电阻:0.001 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP6902GH-HF 数据手册

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AP6902GH-HF  
Preliminary  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
10mΩ  
42A  
Fast Switching Performance  
Two Independent Device  
Halogen Free & RoHS Compliant Product  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
D1 (TAB1)  
D2 (TAB2)  
S1  
SDPAKTM used APEC innovated package and provides two  
independent device that is suitable and optimum for DC/DC  
power application.  
G1  
S2  
G2  
SDPAKTM  
D2  
S2  
D1  
G2  
G1  
S1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
42  
V
ID@TC=25  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
13  
A
10.3  
60  
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
3
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
4.0  
42  
Rthj-a  
Data and specifications subject to change without notice  
1
20090420pre  

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