AP6900GSM

更新时间： 2024-11-18 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		转换器驱动 DC-DC转换器
页数	文件大小	规格书
9页	140K
描述
Simple Drive Requirement, DC-DC Converter Suitable

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中文翻译

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数据手册

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AP6900GSM 数据手册

AP6900GSM

Pb Free Plating Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL MOSFET WITH

SCHOTTKY DIODE

S1/D2

▼ Simple Drive Requirement

CH-1 BV_DSS

R_DS(ON)

30V

▼ DC-DC Converter Suitable

▼ Fast Switching Performance

30mΩ

I_D

CH-2 BV_DSS

R_DS(ON)

5.7A

30V

22mΩ

9.8A

S2/A

SO-8

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

N-Channel 1

MOSFET

S1/D2

Schottky Diode

N-Channel 2

MOSFET

S2/A

Absolute Maximum Ratings

Symbol

Parameter

Rating

Channel-1

Units

Channel-2

V_DS

V_GS

Drain-Source Voltage

±20

5.7

4.6

Gate-Source Voltage

±20

9.8

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

7.8

P_D@T_A=25℃

Total Power Dissipation

1.4

0.01

2.2

W/℃

℃

Linear Derating Factor

0.02

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

Typ.

Max.

Rthj-a (CH-1)

Rthj-a (CH-2)

Thermal Resistance Junction-ambient³

℃/W

Data and specifications subject to change without notice

201121063-1/9

12 3 4 5 6 7...9

中文翻译

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