Datasheet > AP6930GMT-HF

AP6930GMT-HF

更新时间： 2024-11-18 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		开关驱动
页数	文件大小	规格书
4页	108K
描述
Simple Drive Requirement, Fast Switching Characteristic

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AP6930GMT-HF 数据手册

AP6930GMT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

10.5mΩ

20A

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

D1 D1 D2 D2

Description

Advanced Power MOSFETs from APEC provide

the designer with the best combination of fast

switching, ruggedized device design, low on-

resistance and cost-effectiveness.

PMPAK ^®5x6 dual pad provide superior thermal

performance and is design for surface mount

applications.

S1 G1 S2 G2

PMPAK

^®

5x6

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 4.5V

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

14.6

11.7

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.57

-55 to 150

℃

Storage Temperature Range

Operating Junction Temperature Range

T_J

Thermal Data

Symbol

Parameter

Units

℃/W

Rating

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

Data & specifications subject to change without notice

201203222

12 3 4

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