Datasheet > AP6970GN2-HF

AP6970GN2-HF

更新时间： 2024-11-18 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	107K
描述
Bottom Exposed DFN, Lower Profile

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数据手册

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AP6970GN2-HF 数据手册

AP6970GN2-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

G2 S2

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

20V

45mΩ

4.5A

▼ Bottom Exposed DFN

▼ Lower Profile

▼ Halogen Free & RoHS Compliant Product

S1 G1 D2

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

G2 S2

DFN 2x2

S1 G1 D2

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+12

Continuous Drain Current³@ V_GS=4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.5

3.6

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.38

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201104121

12 3 4

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