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AP4438CGM-HF

更新时间： 2024-11-09 12:26:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
4页	100K
描述
Lower Gate Charge, Simple Drive Requirement

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数据手册

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AP4438CGM-HF 数据手册

AP4438CGM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

11.5mΩ

11.8A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

11.8

9.4

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201104121

12 3 4

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