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AP4438GSM-HF PDF预览

AP4438GSM-HF

更新时间: 2024-09-21 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
4页 65K
描述
Simple Drive Requirement, Good Recovery Time

AP4438GSM-HF 数据手册

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AP4438GSM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL MOSFET WITH SCHOTTKY  
DIODE  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
11.5mΩ  
11.7A  
D
D
D
Good Recovery Time  
D
Fast Switching Performance  
G
S
RoHS Compliant & Halogen-Free  
S
SO-8  
S
D
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
Schottky Diode  
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+12  
11.7  
9.3  
50  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
A
A
A
VKA  
Schottky Reverse Voltage  
Continous Forward Current  
Pulsed Diode Forward Current  
30  
V
IF@TA=25℃  
IFM  
1
A
25  
A
Max Power Dissipation (MOSFET)  
Max Power Dissipation (Schottky)  
Storage Temperature Range  
2.5  
2.0  
W
W
PD@TA=25℃  
TSTG  
TJ  
-55 to 150  
-55 to 150  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
/W  
/W  
Maximum Thermal Resistance, Junction-ambient3(MOSFET)  
Maximum Thermal Resistance, Junction-ambient3(Schottky)  
Rthj-a  
Rthj-a  
60  
Data and specifications subject to change without notice  
1
201008121  

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