Datasheet > AP4459M

AP4459M

更新时间： 2024-05-23 22:23:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	236K
描述
SO-8

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AP4459M 数据手册

AP4459M

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-30V

13.5mΩ

-11.3A

▼ Low On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP4459 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and

fast switching performance. It provides the designer with an extreme

efficient device for use in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited

for voltage conversion or switch applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-11.3

-9

Pulsed Drain Current¹

-40

P_D@T_A=25℃

T_STG

Total Power Dissipation

Storage Temperature Range

2.5

℃

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202101281

12 3 4 5 6

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