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AP4500GYT-HF

更新时间： 2024-11-20 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
7页	152K
描述
Simple Drive Requirement, Good Thermal Performance

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数据手册

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AP4500GYT-HF 数据手册

AP4500GYT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

D1/D2

▼ Simple Drive Requirement

N-CH BV_DSS

20V

21mΩ

8.9A

▼ Good Thermal Performance

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

-20V

60mΩ

-5.3A

PMPAK^®3x3

Description

I_D

AP4500 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK ^®3x3 is special for voltage conversion application

using standard infrared reflow technique with the backside heat

sink to achieve the good thermal performance.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

+12

8.9

7.1

-20

+12

-5.3

-4.3

-20

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

Data and specifications subject to change without notice

201206071

12 3 4 5 6 7

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