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AP4455GEH-HF PDF预览

AP4455GEH-HF

更新时间: 2024-11-18 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
4页 55K
描述
Simple Drive Requirement, Lower On-resistance

AP4455GEH-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.82雪崩能效等级(Eas):50 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.021 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):39 W最大脉冲漏极电流 (IDM):120 A
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON

AP4455GEH-HF 数据手册

 浏览型号AP4455GEH-HF的Datasheet PDF文件第2页浏览型号AP4455GEH-HF的Datasheet PDF文件第3页浏览型号AP4455GEH-HF的Datasheet PDF文件第4页 
AP4455GEH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-30V  
21m  
-35A  
D
Lower On-resistance  
G
Fast Switching Characteristic  
RoHS Compliant & Halogen-Free  
S
Description  
G
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
D
TO-252(H)  
S
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
-35  
A
-22  
A
-120  
39  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
W
W
mJ  
Total Power Dissipation  
2
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
50  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
3.2  
Rthj-a  
62.5  
Data and specifications subject to change without notice  
1
201107254  

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