Datasheet > AP4461YT

AP4461YT

更新时间： 2024-09-22 17:15:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	109K
描述
PMPAK-3x3

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中文翻译

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数据手册

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AP4461YT 数据手册

AP4461YT

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ 100% R_g& UIS Test

BV_DSS

-30V

▼ Simple Drive Requirement

▼ Small Size & Lower Profile

▼ RoHS Compliant & Halogen-Free

R_DS(ON)

7.2mΩ

Description

AP4461 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

3x3 package is special for voltage conversion

PMPAK^®3x3

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Gate-Source Voltage

Rating

Units

V_DS

V_GS

-30

+25

Drain Current, V_GS@ 10V⁵(Package Limited)

I_D@T_C=25℃

I_D@T_C=100℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

-40

Drain Current, V_GS@ 10V

Drain Current, V_GS@ 10V³

-30

-17

-13.6

-200

Pulsed Drain Current¹

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

Total Power Dissipation³

Single Pulse Avalanche Energy⁶

Storage Temperature Range

Operating Junction Temperature Range

℃

3.12

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

202301181

12 3 4 5 6

中文翻译

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