Datasheet > AP4438GYT

AP4438GYT

更新时间： 2024-11-22 17:15:55

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	64K
描述
PMPAK-3x3

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中文翻译

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数据手册

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AP4438GYT 数据手册

AP4438GYT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

▼ Small Size & Lower Profile

12mΩ

13.7A

▼ RoHS Compliant & Halogen-Free

Description

AP4438 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The PMPAK^®3x3 package is special for voltage conversion application

using standard infrared reflow technique with the backside heat sink to

achieve the good thermal performance.

PMPAK^®3 x 3

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

13.7

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.57

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

4.5

Rthj-a

Data and specifications subject to change without notice

201501293

12 3 4 5

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