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AO4882 PDF预览

AO4882

更新时间: 2024-09-13 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
5页 276K
描述
40V Dual N-Channel MOSFET

AO4882 数据手册

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AO4882  
40V Dual N-Channel MOSFET  
General Description  
The AO4882 uses advanced trench technology to provide excellent RDS(ON)  
with low gate charge. This is an all  
purpose device that is suitable for use in a wide range of power conversion applications.  
Features  
VDS  
40V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
8A  
< 19m  
< 27mΩ  
RDS(ON) (at VGS=4.5V)  
D1  
D2  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G1  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
40  
V
Gate-Source Voltage  
VGS  
±20  
V
A
TA=25°C  
TA=70°C  
8
Continuous Drain  
Current  
ID  
6
Pulsed Drain Current C  
Avalanche Current C  
IDM  
IAS  
40  
15  
A
Avalanche energy L=0.1mH C  
EAS  
11  
2
mJ  
TA=25°C  
Power Dissipation B  
TA=70°C  
PD  
W
°C  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
1/5  
www.freescale.net.cn  

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