Datasheet > AO4884

AO4884

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	387K
描述
种类:N+N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:4.2A;Vgs(th)(V):±20;漏源导通电阻:13mΩ@10V

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AO4884 数据手册

UMW

AO4884

Dual N-Channel MOSFET

General Description

The AO4884 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge. This is an all

purpose device that is suitable for use in a wide range of

power conversion applications.

Product Summary

V_DS

40V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

10A

< 13mΩ

< 16mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

62.5

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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