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AO4886 (KO4886) PDF预览

AO4886 (KO4886)

更新时间: 2024-10-15 18:09:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 2657K
描述
N-Channel MOSFET

AO4886 (KO4886) 数据手册

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SMD Type  
MOSFET  
N-Channel Enhancement MOSFET  
AO4886 (KO4886)  
Features  
SOP-8  
VDS (V) = 100V  
ID = 3.3A (VGS = 10V)  
RDS(ON) 80mΩ (VGS = 10V)  
RDS(ON) 91mΩ (VGS = 4.5V)  
0.15  
1.50  
D1  
D2  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G1  
G2  
S1  
S2  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
GS  
100  
V
±20  
3.3  
TA=25℃  
TA=70℃  
Continuous Drain Current  
Pulsed Drain Current *1  
ID  
A
2.7  
IDM  
17  
Avalanche Current  
*1  
IAS,IAR  
14  
A
Avalanche Energy L=0.1mH *1  
E
AS,EAR  
10  
mJ  
2
TA=25℃  
TA=70℃  
Power Dissipation *2  
P
D
W
/W  
1.28  
62.5  
90  
t10S  
Thermal Resistance.Junction- to-Ambient *3  
R
thJA  
thJC  
Steady-State *4  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
40  
T
J
150  
-55 to 150  
Storage Temperature Range  
Tstg  
*1 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.  
Ratings are based on low frequency and duty cycles to keep initial T =25°C.  
J
*2 The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.  
*3 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
*4 The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.  
1
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