Datasheet > AO4884

AO4884

更新时间： 2024-11-18 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		PC
页数	文件大小	规格书
6页	434K
描述
40V Dual N-Channel MOSFET

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AO4884 数据手册

AO4884

40V Dual N-Channel MOSFET

General Description

excellent R

The AO4884 uses advanced trench technology to provide

_DS(ON)with low gate charge. This is an all

purpose device that is suitable for use in a wide range of power conversion applications.

Features

V_DS

40V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

10A

< 13mΩ

< 16mΩ

R_DS(ON)(at V_GS= 4.5V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

1/6

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