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AO4815 PDF预览

AO4815

更新时间: 2024-11-18 12:24:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
4页 353K
描述
30V Dual P-Channel MOSFET

AO4815 数据手册

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AO4815  
30V Dual P-Channel MOSFET  
General Description  
provide excellent RDS(ON), and ultra-low low gate  
The AO4815 uses advanced trench technology to  
for use as a load switch or in PWM applications. The  
charge with a 25V gate rating. This device is suitable  
device is ESD protected.  
Features  
VDS (V) = -30V  
ID = -8A (VGS = -20V)  
RDS(ON) < 18m(VGS = -20V)  
R
DS(ON) < 20m(VGS = -10V)  
SOIC-8  
D1  
D2  
S2  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G1  
G2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-30  
V
Gate-Source Voltage  
VGS  
±25  
-8  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current A  
ID  
-6.9  
Pulsed Drain Current B  
IDM  
-40  
TA=25°C  
TA=70°C  
2
PD  
W
°C  
Power Dissipation A  
1.44  
-55 to 150  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
50  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
73  
Maximum Junction-to-Lead C  
RθJL  
31  
1/4  
www.freescale.net.cn  

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