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AO4816 PDF预览

AO4816

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 134K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4816 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

AO4816 数据手册

 浏览型号AO4816的Datasheet PDF文件第2页浏览型号AO4816的Datasheet PDF文件第3页浏览型号AO4816的Datasheet PDF文件第4页 
AO4816  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4816 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
dual device is suitable for use as a load switch or in  
PWM applications. Standard Product AO4816 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO4816L is a Green Product ordering option.  
AO4816 and AO4816L are electrically identical.  
VDS (V) = 30V  
ID = 8.5A  
RDS(ON) < 17m(VGS = 20V)  
R
DS(ON) < 20m(VGS = 10V)  
RDS(ON) < 46m(VGS = 4.5V)  
D1  
S1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
SOIC-8  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain CurrentB  
±25  
8.5  
V
A
TA=25°C  
TA=70°C  
ID  
6.5  
IDM  
40  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
74  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
Maximum Junction-to-LeadC  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
33  
Alpha & Omega Semiconductor, Ltd.  

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